NXPSC04650D6J
Manufacturer
WEEN
Data sheet
Data sheet
Specification
Specification
DIODE SIL CARBIDE 650V 4A DPAK
DIODE SIL CARBIDE 650V 4A DPAK
Detailed specification
Detailed specification
Diode 650 V 4A surface-mounted DPAK
Diode 650 V 4A surface-mounted DPAK
Description
Description
The NXPSC04650D6J is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 4 A. The DPAK package ensures efficient thermal management and reduced EMI, making it suitable for various applications.
The NXPSC04650D6J is a Silicon Carbide Schottky diode designed for high-frequency switched mode power supplies. It features a repetitive peak reverse voltage of 650 V and an average forward current of 4 A. The DPAK package ensures efficient thermal management and reduced EMI, making it suitable for various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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