NTMD3P03R2G
Manufacturer
UMW YOUTAI SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET 2P-CH 30V 2.34A 8SOIC
MOSFET 2P-CH 30V 2.34A 8SOIC
Detailed specification
Detailed specification
P-Channel 30 V 3.86A (Tj) 2W (Ta) surface-mounted 8-SOP
P-Channel 30 V 3.86A (Tj) 2W (Ta) surface-mounted 8-SOP
Description
Description
The NTMD3P03R2G is a P-Channel MOSFET with a maximum Drain-to-Source Voltage of -30V and a continuous Drain Current of -3.86A. It features low RDS(on) values of 63mΩ at VGS=-10V and 90mΩ at VGS=-4.5V, making it suitable for high-efficiency applications. The device is housed in an 8-SOP surface mount package, optimizing board space.
The NTMD3P03R2G is a P-Channel MOSFET with a maximum Drain-to-Source Voltage of -30V and a continuous Drain Current of -3.86A. It features low RDS(on) values of 63mΩ at VGS=-10V and 90mΩ at VGS=-4.5V, making it suitable for high-efficiency applications. The device is housed in an 8-SOP surface mount package, optimizing board space.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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