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NTF2955T1G

Manufacturer

UMW YOUTAI SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
NTF2955T1G is designed for use in industrial and automotive applications, particularly in power management circuits where high efficiency and thermal performance are critical. Its specifications make it ideal for switching and amplification tasks in various electronic devices.
Specification
Specification
MOSFET P-CH 60V 1.7A SOT223
MOSFET P-CH 60V 1.7A SOT223
Detailed specification
Detailed specification
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Description
Description
The NTF2955T1G is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of -60V and a continuous Drain Current (ID) of -7A at VGS = -10V. It features an on-state resistance (RDS(on)) of less than 55mΩ and operates within a temperature range of -55 to 150 °C. This device is suitable for various applications requiring efficient power management.
The NTF2955T1G is a P-Channel MOSFET with a maximum Drain-Source Voltage (VDS) of -60V and a continuous Drain Current (ID) of -7A at VGS = -10V. It features an on-state resistance (RDS(on)) of less than 55mΩ and operates within a temperature range of -55 to 150 °C. This device is suitable for various applications requiring efficient power management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
NTF2955T1G is also available from the following manufacturers
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