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NTD5867NLT4G

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ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
NTD5867NLT4G is suitable for power management applications in industrial and automotive domains, including motor control, power supplies, and DC-DC converters, where high current capability and low on-state resistance are critical for efficiency and thermal performance.
Specification
Specification
MOSFET N-CH 60V 20A DPAK
MOSFET N-CH 60V 20A DPAK
Detailed specification
Detailed specification
N-Channel 60 V 20A (Tc) 36W (Tc) surface-mounted DPAK
N-Channel 60 V 20A (Tc) 36W (Tc) surface-mounted DPAK
Description
Description
The NTD5867NLT4G is an N-Channel MOSFET designed for high-performance applications, featuring a maximum Drain-to-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 20 A. It has a low RDS(on) of 39 mΩ at VGS = 10 V, ensuring efficient power management. The device is housed in a DPAK package and is RoHS compliant.
The NTD5867NLT4G is an N-Channel MOSFET designed for high-performance applications, featuring a maximum Drain-to-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 20 A. It has a low RDS(on) of 39 mΩ at VGS = 10 V, ensuring efficient power management. The device is housed in a DPAK package and is RoHS compliant.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
NTD5867NLT4G is also available from the following manufacturers
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