NTD5867NLT4G
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 20A DPAK
MOSFET N-CH 60V 20A DPAK
Detailed specification
Detailed specification
N-Channel 60 V 20A (Tc) 36W (Tc) surface-mounted DPAK
N-Channel 60 V 20A (Tc) 36W (Tc) surface-mounted DPAK
Description
Description
The NTD5867NLT4G is an N-Channel MOSFET designed for high-performance applications, featuring a maximum Drain-to-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 20 A. It has a low RDS(on) of 39 mΩ at VGS = 10 V, ensuring efficient power management. The device is housed in a DPAK package and is RoHS compliant.
The NTD5867NLT4G is an N-Channel MOSFET designed for high-performance applications, featuring a maximum Drain-to-Source Voltage (VDSS) of 60 V and a continuous Drain Current (ID) of 20 A. It has a low RDS(on) of 39 mΩ at VGS = 10 V, ensuring efficient power management. The device is housed in a DPAK package and is RoHS compliant.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
NTD5867NLT4G is also available from the following manufacturersContact sales
Contact Patrick or one of our other skilled sales representatives. They'll help you find the right service option.C