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NP90N06VDK-E1-AY

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
NP90N06VDK is designed for automotive applications, particularly in high current switching scenarios. Its low on-state resistance and high power dissipation capabilities make it ideal for use in power management systems, motor control, and other automotive electronic systems requiring efficient switching performance.
Specification
Specification
POWER TRANSISTOR N-CH AUTO POWER
POWER TRANSISTOR N-CH AUTO POWER
Detailed specification
Detailed specification
N-Channel 60 V 90A (Tc) 1.2W (Ta), 147W (Tc) surface-mounted TO-252 (MP-3ZP)
N-Channel 60 V 90A (Tc) 1.2W (Ta), 147W (Tc) surface-mounted TO-252 (MP-3ZP)
Description
Description
The NP90N06VDK is an N-channel power MOSFET designed for high current switching applications, featuring a maximum drain-source voltage of 60 V and a continuous drain current of 90 A. It has a super low on-state resistance (RDS(on)1 = 5.3 mΩ at VGS = 10 V, ID = 45 A) and low input capacitance (Ciss = 4000 pF). This device is suitable for automotive applications and is AEC-Q101 qualified, housed in a surface-mounted TO-252 (MP-3ZP) package.
The NP90N06VDK is an N-channel power MOSFET designed for high current switching applications, featuring a maximum drain-source voltage of 60 V and a continuous drain current of 90 A. It has a super low on-state resistance (RDS(on)1 = 5.3 mΩ at VGS = 10 V, ID = 45 A) and low input capacitance (Ciss = 4000 pF). This device is suitable for automotive applications and is AEC-Q101 qualified, housed in a surface-mounted TO-252 (MP-3ZP) package.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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