NP83P04PDG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 40V 83A TO-263
MOSFET P-CH 40V 83A TO-263
Detailed specification
Detailed specification
P-Channel 40 V 83A (Tc) surface-mounted TO-263
P-Channel 40 V 83A (Tc) surface-mounted TO-263
Description
Description
The NP83P04PDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -83A. It has a super low on-state resistance of RDS(on) = 5.3 mΩ at VGS = -10V and ID = -41.5A, making it suitable for automotive applications. The device is AEC-Q101 qualified and has low input capacitance of Ciss = 9820 pF.
The NP83P04PDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -83A. It has a super low on-state resistance of RDS(on) = 5.3 mΩ at VGS = -10V and ID = -41.5A, making it suitable for automotive applications. The device is AEC-Q101 qualified and has low input capacitance of Ciss = 9820 pF.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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