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NP75N04YUG-E1-AY

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
NP75N04YUG is designed for high current switching applications in automotive and industrial domains. Its low on-state resistance and high power dissipation capabilities make it ideal for power management and control in automotive systems, as well as in various industrial applications requiring efficient switching performance.
Specification
Specification
MOSFET N-CH 40V 75A 8HSON
MOSFET N-CH 40V 75A 8HSON
Detailed specification
Detailed specification
N-Channel 40 V 75A (Tc) 1W (Ta), 138W (Tc) surface-mounted 8-HSON
N-Channel 40 V 75A (Tc) 1W (Ta), 138W (Tc) surface-mounted 8-HSON
Description
Description
The NP75N04YUG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 75A. It has a low on-state resistance (RDS(on)) of 4.8 mΩ at VGS = 10V and ID = 37.5A, making it suitable for automotive applications. The device is housed in an 8-pin surface mount HSON package, ensuring compact design and efficient thermal performance.
The NP75N04YUG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 75A. It has a low on-state resistance (RDS(on)) of 4.8 mΩ at VGS = 10V and ID = 37.5A, making it suitable for automotive applications. The device is housed in an 8-pin surface mount HSON package, ensuring compact design and efficient thermal performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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