NP36P06SLG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 60V 36A TO252
MOSFET P-CH 60V 36A TO252
Detailed specification
Detailed specification
P-Channel 60 V 36A (Tc) 1.2W (Ta), 56W (Tc) surface-mounted TO-252 (MP-3ZK)
P-Channel 60 V 36A (Tc) 1.2W (Ta), 56W (Tc) surface-mounted TO-252 (MP-3ZK)
Description
Description
The NP36P06SLG-E1-AY is a P-Channel Power MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a Drain Current of -36A. It has a super low on-state resistance of RDS(on) = 30 mΩ (VGS = -10V, ID = -18A) and is qualified for automotive applications. The device is housed in a surface-mounted TO-252 package and includes built-in gate protection.
The NP36P06SLG-E1-AY is a P-Channel Power MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a Drain Current of -36A. It has a super low on-state resistance of RDS(on) = 30 mΩ (VGS = -10V, ID = -18A) and is qualified for automotive applications. The device is housed in a surface-mounted TO-252 package and includes built-in gate protection.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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