NP36P06KDG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 60V 36A TO263
MOSFET P-CH 60V 36A TO263
Detailed specification
Detailed specification
P-Channel 60 V 36A (Tc) 1.8W (Ta), 56W (Tc) surface-mounted TO-263
P-Channel 60 V 36A (Tc) 1.8W (Ta), 56W (Tc) surface-mounted TO-263
Description
Description
The NP36P06KDG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 29.5 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a TO-263 package and is AEC-Q101 qualified.
The NP36P06KDG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 29.5 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a TO-263 package and is AEC-Q101 qualified.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Patrick or one of our other skilled sales representatives. They'll help you find the right service option.C