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Manufacturers/RENESAS/NP36P04KDG-E1-AY

NP36P04KDG-E1-AY

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
NP36P04KDG-E1-AY is designed for automotive applications, particularly in high current switching scenarios. Its low on-state resistance and robust thermal performance make it ideal for use in power management systems, motor control, and other automotive electronic systems requiring efficient switching capabilities.
Specification
Specification
MOSFET P-CH 40V 36A TO263
MOSFET P-CH 40V 36A TO263
Detailed specification
Detailed specification
P-Channel 40 V 36A (Tc) 1.8W (Ta), 56W (Tc) surface-mounted TO-263
P-Channel 40 V 36A (Tc) 1.8W (Ta), 56W (Tc) surface-mounted TO-263
Description
Description
The NP36P04KDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 17.0 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
The NP36P04KDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -40V and a continuous Drain Current of -36A. It has a super low on-state resistance (RDS(on)) of 17.0 mΩ at VGS = -10V and ID = -18A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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