NP30N04QUK-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET 2N-CH 40V 30A 8HSON
MOSFET 2N-CH 40V 30A 8HSON
Detailed specification
Detailed specification
Mosfet Array 40V 30A (Tc) 1W (Ta), 59W (Tc) surface-mounted 8-HSON (5x5.4 mm (0.20x0.21 in))
Mosfet Array 40V 30A (Tc) 1W (Ta), 59W (Tc) surface-mounted 8-HSON (5x5.4 mm (0.20x0.21 in))
Description
Description
The NP30N04QUK-E1-AY is a dual N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of 40V and a Drain Current of 30A. It has a super low on-state resistance of RDS(on) = 8 mΩ (VGS = 10V, ID = 15A) and a total power dissipation of 59W (Tc). This device is suitable for automotive applications and is AEC-Q101 qualified, housed in a compact 8-pin HSON package (5x5.4 mm).
The NP30N04QUK-E1-AY is a dual N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of 40V and a Drain Current of 30A. It has a super low on-state resistance of RDS(on) = 8 mΩ (VGS = 10V, ID = 15A) and a total power dissipation of 59W (Tc). This device is suitable for automotive applications and is AEC-Q101 qualified, housed in a compact 8-pin HSON package (5x5.4 mm).
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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