NP23N06YDG-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 60V 23A 8HSON
MOSFET N-CH 60V 23A 8HSON
Detailed specification
Detailed specification
N-Channel 60 V 23A (Tc) 1W (Ta), 60W (Tc) surface-mounted 8-HSON
N-Channel 60 V 23A (Tc) 1W (Ta), 60W (Tc) surface-mounted 8-HSON
Description
Description
The NP23N06YDG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a Drain Current (ID) of 23 A. It has a low on-state resistance (RDS(on)) of 27 mΩ at VGS = 10 V and ID = 11.5 A, making it suitable for automotive applications. The device is housed in an 8-pin surface mount HSON package, ensuring compact design and efficient thermal performance.
The NP23N06YDG is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 60 V and a Drain Current (ID) of 23 A. It has a low on-state resistance (RDS(on)) of 27 mΩ at VGS = 10 V and ID = 11.5 A, making it suitable for automotive applications. The device is housed in an 8-pin surface mount HSON package, ensuring compact design and efficient thermal performance.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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