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NP20P06SLG-E1-AY

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
NP20P06SLG-E1-AY is designed for automotive applications, particularly in high current switching scenarios. Its low on-state resistance and built-in gate protection diode enhance performance in automotive circuits, ensuring reliability and efficiency in demanding environments.
Specification
Specification
MOSFET P-CH 60V 20A TO252
MOSFET P-CH 60V 20A TO252
Detailed specification
Detailed specification
P-Channel 60 V 20A (Tc) 1.2W (Ta), 38W (Tc) surface-mounted TO-252 (MP-3ZK)
P-Channel 60 V 20A (Tc) 1.2W (Ta), 38W (Tc) surface-mounted TO-252 (MP-3ZK)
Description
Description
The NP20P06SLG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -20A. It has a super low on-state resistance of RDS(on) = 48 mΩ at VGS = -10V and ID = -10A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-252 package and is AEC-Q101 qualified.
The NP20P06SLG-E1-AY is a P-Channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -20A. It has a super low on-state resistance of RDS(on) = 48 mΩ at VGS = -10V and ID = -10A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-252 package and is AEC-Q101 qualified.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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