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NP15P06SLG-E1-AY

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
NP15P06SLG-E1-AY is designed for automotive applications, particularly in high current switching circuits. Its low on-state resistance and robust thermal performance make it ideal for use in power management systems, motor control, and other automotive electronic systems requiring reliable and efficient switching.
Specification
Specification
MOSFET P-CH 60V 15A TO252
MOSFET P-CH 60V 15A TO252
Detailed specification
Detailed specification
P-Channel 60 V 15A (Ta) 1.2W (Ta), 30W (Tc) surface-mounted TO-252 (MP-3ZK)
P-Channel 60 V 15A (Ta) 1.2W (Ta), 30W (Tc) surface-mounted TO-252 (MP-3ZK)
Description
Description
The NP15P06SLG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -15A. It has a super low on-state resistance of RDS(on) = 70 mΩ at VGS = -10V and ID = -7.5A, with a total power dissipation of 30W at Tc = 25°C. This device is AEC-Q101 qualified, making it suitable for automotive applications.
The NP15P06SLG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage of -60V and a continuous Drain Current of -15A. It has a super low on-state resistance of RDS(on) = 70 mΩ at VGS = -10V and ID = -7.5A, with a total power dissipation of 30W at Tc = 25°C. This device is AEC-Q101 qualified, making it suitable for automotive applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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