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NP100P06PDG-E1-AY

Manufacturer

RENESAS

data-sheet
Data sheet
Data sheet
The NP100P06PDG-E1-AY is designed for automotive applications, particularly in high current switching scenarios. Its low on-state resistance and high power dissipation capabilities make it ideal for use in electric vehicles, power management systems, and other automotive electronic control units where efficiency and reliability are critical.
Specification
Specification
MOSFET P-CH 60V 100A TO263
MOSFET P-CH 60V 100A TO263
Detailed specification
Detailed specification
P-Channel 60 V 100A (Tc) 1.8W (Ta), 200W (Tc) surface-mounted TO-263
P-Channel 60 V 100A (Tc) 1.8W (Ta), 200W (Tc) surface-mounted TO-263
Description
Description
The NP100P06PDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -60V and a continuous Drain Current (ID) of -100A. It has a super low on-state resistance (RDS(on)) of 6.0 mΩ at VGS = -10V and ID = -50A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
The NP100P06PDG-E1-AY is a P-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of -60V and a continuous Drain Current (ID) of -100A. It has a super low on-state resistance (RDS(on)) of 6.0 mΩ at VGS = -10V and ID = -50A, making it suitable for automotive applications. The device is housed in a surface-mounted TO-263 package and is AEC-Q101 qualified.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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