NP100N04PUK-E1-AY
Manufacturer
RENESAS
Data sheet
Data sheet
Specification
Specification
MOSFET N-CH 40V 100A TO263
MOSFET N-CH 40V 100A TO263
Detailed specification
Detailed specification
N-Channel 40 V 100A (Tc) 1.8W (Ta), 176W (Tc) surface-mounted TO-263
N-Channel 40 V 100A (Tc) 1.8W (Ta), 176W (Tc) surface-mounted TO-263
Description
Description
The NP100N04PUK-E1-AY is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 100A. It has a low on-state resistance (RDS(on)) of 2.3 mΩ at VGS = 10V and ID = 50A, making it suitable for automotive applications. The device is housed in a TO-263 package and is AEC-Q101 qualified, ensuring reliability in demanding environments.
The NP100N04PUK-E1-AY is an N-channel MOSFET designed for high current switching applications, featuring a maximum Drain-Source Voltage (VDSS) of 40V and a Drain Current (ID) of 100A. It has a low on-state resistance (RDS(on)) of 2.3 mΩ at VGS = 10V and ID = 50A, making it suitable for automotive applications. The device is housed in a TO-263 package and is AEC-Q101 qualified, ensuring reliability in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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