NJW21193G
Manufacturer
EVVO
Data sheet
Data sheet
Specification
Specification
TRANS PNP 250V 16A TO3P-3L
TRANS PNP 250V 16A TO3P-3L
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 250 V 16 A 4MHz 200 W Through Hole TO-3PB
Bipolar (BJT) Transistor PNP 250 V 16 A 4MHz 200 W Through Hole TO-3PB
Description
Description
The NJW21193G is a high-performance PNP bipolar junction transistor (BJT) designed for applications requiring high voltage and current handling capabilities. With a maximum collector-emitter voltage of 250V and a continuous collector current rating of 16A, this transistor is suitable for power amplification and switching applications. It operates at a frequency of up to 4MHz and can dissipate up to 200W of power. Packaged in a TO-3PB through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic circuits.
The NJW21193G is a high-performance PNP bipolar junction transistor (BJT) designed for applications requiring high voltage and current handling capabilities. With a maximum collector-emitter voltage of 250V and a continuous collector current rating of 16A, this transistor is suitable for power amplification and switching applications. It operates at a frequency of up to 4MHz and can dissipate up to 200W of power. Packaged in a TO-3PB through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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