NJW0281G
Manufacturer
ON SEMICONDUCTOR
Specification
Specification
TRANS NPN 250V 15A TO3P-3L
TRANS NPN 250V 15A TO3P-3L
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 250 V 15 A 30MHz 150 W Through Hole TO-3P-3L
Bipolar (BJT) Transistor NPN 250 V 15 A 30MHz 150 W Through Hole TO-3P-3L
Description
Description
The NJW0281G is a high-performance NPN bipolar junction transistor (BJT) designed for applications requiring high voltage and current handling capabilities. With a maximum collector-emitter voltage of 250V and a continuous collector current rating of 15A, this transistor is suitable for power amplification and switching applications. It operates at a frequency of up to 30MHz and has a power dissipation capability of 150W. Packaged in a TO-3P-3L through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic circuits.
The NJW0281G is a high-performance NPN bipolar junction transistor (BJT) designed for applications requiring high voltage and current handling capabilities. With a maximum collector-emitter voltage of 250V and a continuous collector current rating of 15A, this transistor is suitable for power amplification and switching applications. It operates at a frequency of up to 30MHz and has a power dissipation capability of 150W. Packaged in a TO-3P-3L through-hole configuration, it offers robust thermal performance and ease of mounting in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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