NDT456P
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
MOSFET P-CH 30V 7.5A SOT-223-4
MOSFET P-CH 30V 7.5A SOT-223-4
Detailed specification
Detailed specification
P-Channel 30 V 7.5A (Ta) 3W (Ta) surface-mounted SOT-223-4
P-Channel 30 V 7.5A (Ta) 3W (Ta) surface-mounted SOT-223-4
Description
Description
The NDT456P is a P-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage of -30V and a continuous Drain Current of -7.5A. It is housed in a SOT-223-4 surface mount package, with a maximum power dissipation of 3W. The device exhibits low on-state resistance (RDS(ON)) of 0.030Ω at VGS = -10V, making it suitable for efficient power management in battery-powered circuits and DC motor control.
The NDT456P is a P-Channel MOSFET designed for low voltage applications, featuring a maximum Drain-Source Voltage of -30V and a continuous Drain Current of -7.5A. It is housed in a SOT-223-4 surface mount package, with a maximum power dissipation of 3W. The device exhibits low on-state resistance (RDS(ON)) of 0.030Ω at VGS = -10V, making it suitable for efficient power management in battery-powered circuits and DC motor control.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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