MURS160J
Manufacturer
WEEN
Data sheet
Data sheet
Specification
Specification
DIODE GEN PURP 600V 1A SMAE
DIODE GEN PURP 600V 1A SMAE
Detailed specification
Detailed specification
Diode 600 V 1A surface-mounted SMAE
Diode 600 V 1A surface-mounted SMAE
Description
Description
The MURS160J is an ultrafast power diode with a maximum repetitive peak reverse voltage of 600 V and an average forward current rating of 1 A. It features a low forward voltage drop, low leakage current, and soft recovery characteristics, making it suitable for high-frequency applications. The diode is housed in a surface mount SMA package, ensuring efficient thermal management and fast switching capabilities.
The MURS160J is an ultrafast power diode with a maximum repetitive peak reverse voltage of 600 V and an average forward current rating of 1 A. It features a low forward voltage drop, low leakage current, and soft recovery characteristics, making it suitable for high-frequency applications. The diode is housed in a surface mount SMA package, ensuring efficient thermal management and fast switching capabilities.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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