MT3S111(TE85L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
RF TRANS NPN 6V 11.5GHZ SMINI
RF TRANS NPN 6V 11.5GHZ SMINI
Detailed specification
Detailed specification
RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini
RF Transistor NPN 6V 100mA 11.5GHz 700mW Surface Mount S-Mini
Description
Description
The MT3S111 is a Silicon-Germanium NPN RF transistor designed for low-noise, low-distortion amplifier applications. It operates at a collector-emitter voltage of 6V, with a maximum collector current of 100mA and a power dissipation of 700mW. The device features a low noise figure of 0.9 dB at 1 GHz and a transition frequency of 11.5 GHz, making it suitable for VHF-UHF applications.
The MT3S111 is a Silicon-Germanium NPN RF transistor designed for low-noise, low-distortion amplifier applications. It operates at a collector-emitter voltage of 6V, with a maximum collector current of 100mA and a power dissipation of 700mW. The device features a low noise figure of 0.9 dB at 1 GHz and a transition frequency of 11.5 GHz, making it suitable for VHF-UHF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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