MT3S111P(TE12L,F)
Manufacturer
TOSHIBA
Data sheet
Data sheet
Specification
Specification
RF TRANS NPN 6V 8GHZ PW-MINI
RF TRANS NPN 6V 8GHZ PW-MINI
Detailed specification
Detailed specification
RF Transistor NPN 6V (0.24 in) 100mA (0.004 in) 8GHz (0 in) 1W (0.0013 in) Surface Mount PW-MINI
RF Transistor NPN 6V (0.24 in) 100mA (0.004 in) 8GHz (0 in) 1W (0.0013 in) Surface Mount PW-MINI
Description
Description
The MT3S111P(TE12L,F) is a silicon-germanium NPN RF transistor designed for low-noise, low-distortion amplifier applications. It operates at a collector-emitter voltage of 6V, with a maximum collector current of 100mA and a power dissipation of 1W. The device features a low noise figure of 0.95 dB at 1 GHz and a transition frequency of up to 8 GHz, making it suitable for VHF-UHF applications.
The MT3S111P(TE12L,F) is a silicon-germanium NPN RF transistor designed for low-noise, low-distortion amplifier applications. It operates at a collector-emitter voltage of 6V, with a maximum collector current of 100mA and a power dissipation of 1W. The device features a low noise figure of 0.95 dB at 1 GHz and a transition frequency of up to 8 GHz, making it suitable for VHF-UHF applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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