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MR0A08BMA35R

Manufacturer

EVERSPIN

data-sheet
Data sheet
Data sheet
MR0A08B is ideal for industrial applications requiring reliable, non-volatile memory solutions. Its fast read/write capabilities and long data retention make it suitable for critical data storage in systems such as telecommunications, automotive, and consumer electronics.
Detailed specification
Detailed specification
MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
MRAM 1Mb 3.3V 128Kx8 35ns Parallel MRAM
Description
Description
The MR0A08B is a 1Mb magnetoresistive random access memory (MRAM) device, organized as 128K x 8 bits. It features 35 ns read/write timing, unlimited endurance, and non-volatile data retention for over 20 years. Available in 44-pin TSOP2 and 48-ball BGA packages, it operates at 3.3V and supports commercial and industrial temperature ranges.
The MR0A08B is a 1Mb magnetoresistive random access memory (MRAM) device, organized as 128K x 8 bits. It features 35 ns read/write timing, unlimited endurance, and non-volatile data retention for over 20 years. Available in 44-pin TSOP2 and 48-ball BGA packages, it operates at 3.3V and supports commercial and industrial temperature ranges.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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