MPSA42
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 300V 0.5A TO92-3
TRANS NPN 300V 0.5A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 300 V 500 mA 50MHz 625 mW Through Hole TO-92-3
Description
Description
The MPSA42 is a high-voltage NPN bipolar junction transistor (BJT) designed for applications requiring up to 300 V collector-emitter voltage and 500 mA collector current. It features a maximum power dissipation of 625 mW and a current-gain bandwidth product of 50 MHz, making it suitable for various switching and amplification tasks in electronic circuits.
The MPSA42 is a high-voltage NPN bipolar junction transistor (BJT) designed for applications requiring up to 300 V collector-emitter voltage and 500 mA collector current. It features a maximum power dissipation of 625 mW and a current-gain bandwidth product of 50 MHz, making it suitable for various switching and amplification tasks in electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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