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MMBZ5V6ALT1G

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
MMBZ5V6ALT1G is ideal for applications requiring transient overvoltage protection in voltage-sensitive equipment such as computers, printers, and communication systems. Its dual junction design allows for efficient protection of two separate lines, making it suitable for high-density PCB layouts.
Specification
Specification
DIODE ZENER 5.6V SOT23-3
DIODE ZENER 5.6V SOT23-3
Detailed specification
Detailed specification
Zener Diode Array 1 Pair Common Anode 5.6 V 300 mW ±5% SOT-23-3 (TO-236)
Zener Diode Array 1 Pair Common Anode 5.6 V 300 mW ±5% SOT-23-3 (TO-236)
Description
Description
The MMBZ5V6ALT1G is a dual monolithic silicon Zener diode array designed for transient overvoltage protection. It features a common anode configuration with a breakdown voltage of 5.6 V and a power rating of 300 mW. Packaged in a SOT-23-3 case, it is suitable for applications in voltage-sensitive equipment, ensuring efficient space utilization on PCBs.
The MMBZ5V6ALT1G is a dual monolithic silicon Zener diode array designed for transient overvoltage protection. It features a common anode configuration with a breakdown voltage of 5.6 V and a power rating of 300 mW. Packaged in a SOT-23-3 case, it is suitable for applications in voltage-sensitive equipment, ensuring efficient space utilization on PCBs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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Other manufacturers
MMBZ5V6ALT1G is also available from the following manufacturers
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