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MMBZ27VAL-QVL

Manufacturer

NEXPERIA

data-sheet
Data sheet
Data sheet
MMBZ27VAL-Q is designed for ESD and transient overvoltage protection in applications such as computers, audio/video equipment, cellular handsets, automotive electronic control units, and portable electronics. Its low capacitance and high ESD protection make it ideal for safeguarding sensitive electronic components in industrial and automotive environments.
Specification
Specification
MMBZ27VAL-Q/SOT23/TO-236AB
MMBZ27VAL-Q/SOT23/TO-236AB
Detailed specification
Detailed specification
40V Clamp 1A Ipp Tvs Diode Surface Mount TO-236AB
40V Clamp 1A Ipp Tvs Diode Surface Mount TO-236AB
Description
Description
The MMBZ27VAL-Q is a low capacitance unidirectional double ESD protection diode in a common anode configuration, housed in a SOT23 (TO-236AB) package. It provides ESD protection up to 30 kV and features a reverse standoff voltage of 22 V, low diode capacitance (Cd ≤ 60 pF), and ultra-low leakage current (IRM = 5 nA). Rated for peak pulse power of 40 W and peak pulse current of 1 A, it is suitable for protecting signal lines in various electronic applications.
The MMBZ27VAL-Q is a low capacitance unidirectional double ESD protection diode in a common anode configuration, housed in a SOT23 (TO-236AB) package. It provides ESD protection up to 30 kV and features a reverse standoff voltage of 22 V, low diode capacitance (Cd ≤ 60 pF), and ultra-low leakage current (IRM = 5 nA). Rated for peak pulse power of 40 W and peak pulse current of 1 A, it is suitable for protecting signal lines in various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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