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MMBZ18VAL-QR

Manufacturer

NEXPERIA

data-sheet
Data sheet
Data sheet
MMBZ18VAL-Q is designed for ESD protection in automotive, consumer electronics, and telecommunications applications. It is suitable for use in computers, audio/video equipment, cellular handsets, and automotive electronic control units, providing reliable protection against electrostatic discharge and transient voltage spikes.
Specification
Specification
MMBZ18VAL-Q/SOT23/TO-236AB
MMBZ18VAL-Q/SOT23/TO-236AB
Detailed specification
Detailed specification
25V Clamp 1.6A Ipp Tvs Diode Surface Mount TO-236AB
25V Clamp 1.6A Ipp Tvs Diode Surface Mount TO-236AB
Description
Description
The MMBZ18VAL-Q is a low capacitance unidirectional double ESD protection diode designed for ESD and transient overvoltage protection. It features a reverse standoff voltage of 14.5 V, low diode capacitance (Cd ≤ 90 pF), and rated peak pulse power of 40 W. This device is suitable for protecting up to two signal lines in various applications.
The MMBZ18VAL-Q is a low capacitance unidirectional double ESD protection diode designed for ESD and transient overvoltage protection. It features a reverse standoff voltage of 14.5 V, low diode capacitance (Cd ≤ 90 pF), and rated peak pulse power of 40 W. This device is suitable for protecting up to two signal lines in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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