MMBZ12VAL-QR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
MMBZ12VAL-Q/SOT23/TO-236AB
MMBZ12VAL-Q/SOT23/TO-236AB
Detailed specification
Detailed specification
17V Clamp 2.35A Ipp Tvs Diode Surface Mount TO-236AB
17V Clamp 2.35A Ipp Tvs Diode Surface Mount TO-236AB
Description
Description
The MMBZ12VAL-Q is a low capacitance unidirectional double ESD protection diode designed for ESD and transient overvoltage protection. It features a reverse standoff voltage of 8.5 V, low diode capacitance (Cd ≤ 140 pF), and a rated peak pulse power of 40 W. This device is encapsulated in a SOT23 (TO-236AB) surface-mounted package, suitable for protecting up to two signal lines.
The MMBZ12VAL-Q is a low capacitance unidirectional double ESD protection diode designed for ESD and transient overvoltage protection. It features a reverse standoff voltage of 8.5 V, low diode capacitance (Cd ≤ 140 pF), and a rated peak pulse power of 40 W. This device is encapsulated in a SOT23 (TO-236AB) surface-mounted package, suitable for protecting up to two signal lines.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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