MMBTA42-QR
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 300V 0.1A TO236AB
TRANS NPN 300V 0.1A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 300 V 100 mA 50 MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 300 V 100 mA 50 MHz 250 mW surface-mounted TO-236AB
Description
Description
The MMBTA42-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 300 V, a collector current of 100 mA, and a power dissipation of 250 mW. This device operates at frequencies up to 50 MHz, making it suitable for various communication applications.
The MMBTA42-Q is a high-voltage NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 300 V, a collector current of 100 mA, and a power dissipation of 250 mW. This device operates at frequencies up to 50 MHz, making it suitable for various communication applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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