MMBT3906RFG
Manufacturer
TAIWAN SEMICONDUCTORS
Data sheet
Data sheet
Specification
Specification
TRANS PNP 40V 0.2A SOT23
TRANS PNP 40V 0.2A SOT23
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 350 mW surface-mounted SOT-23
Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 350 mW surface-mounted SOT-23
Description
Description
The MMBT3906 RFG is a PNP bipolar junction transistor designed for low power applications. It features a maximum collector-emitter voltage of 40V, a collector current of 200mA, and a power dissipation of 350mW. With a transition frequency of 250MHz, it is suitable for high-frequency switching applications. The device is housed in a SOT-23 package, ensuring compatibility with automated assembly processes.
The MMBT3906 RFG is a PNP bipolar junction transistor designed for low power applications. It features a maximum collector-emitter voltage of 40V, a collector current of 200mA, and a power dissipation of 350mW. With a transition frequency of 250MHz, it is suitable for high-frequency switching applications. The device is housed in a SOT-23 package, ensuring compatibility with automated assembly processes.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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