MMBT2907ARFG
Manufacturer
TAIWAN SEMICONDUCTORS
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 0.6A SOT23
TRANS PNP 60V 0.6A SOT23
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 350 mW surface-mounted SOT-23
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 350 mW surface-mounted SOT-23
Description
Description
The MMBT2907A RFG is a PNP bipolar junction transistor designed for low power loss and high efficiency applications. It features a maximum collector-emitter voltage of -60 V, a collector current of -600 mA, and a power dissipation of 350 mW. This surface-mounted SOT-23 package is ideal for automated placement and offers high surge current capability, making it suitable for various electronic applications.
The MMBT2907A RFG is a PNP bipolar junction transistor designed for low power loss and high efficiency applications. It features a maximum collector-emitter voltage of -60 V, a collector current of -600 mA, and a power dissipation of 350 mW. This surface-mounted SOT-23 package is ideal for automated placement and offers high surge current capability, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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