MMBT2222A,215
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 40V 0.6A TO236AB
TRANS NPN 40V 0.6A TO236AB
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 40 V 600 mA 300 MHz 250 mW surface-mounted TO-236AB
Bipolar (BJT) Transistor NPN 40 V 600 mA 300 MHz 250 mW surface-mounted TO-236AB
Description
Description
The MMBT2222A is an NPN bipolar junction transistor designed for switching and linear amplification applications. It features a maximum collector current of 600 mA, a collector-emitter voltage of 40 V, and a transition frequency of 300 MHz. Packaged in a surface-mounted TO-236AB (SOT23) configuration, it offers efficient thermal performance with a total power dissipation of 250 mW and a thermal resistance of 500 K/W.
The MMBT2222A is an NPN bipolar junction transistor designed for switching and linear amplification applications. It features a maximum collector current of 600 mA, a collector-emitter voltage of 40 V, and a transition frequency of 300 MHz. Packaged in a surface-mounted TO-236AB (SOT23) configuration, it offers efficient thermal performance with a total power dissipation of 250 mW and a thermal resistance of 500 K/W.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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