MJD41C-QJ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 100V 10A DPAK
TRANS NPN 100V 10A DPAK
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 10 A 3 MHz 1.6 W surface-mounted DPAK
Bipolar (BJT) Transistor NPN 100 V 10 A 3 MHz 1.6 W surface-mounted DPAK
Description
Description
The MJD41C-QJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a peak collector current of 10 A. With a power dissipation capability of 1.6 W and fast switching speeds, it is suitable for various power management applications, including load switching and motor drives.
The MJD41C-QJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a peak collector current of 10 A. With a power dissipation capability of 1.6 W and fast switching speeds, it is suitable for various power management applications, including load switching and motor drives.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Nicklas or one of our other skilled sales representatives. They'll help you find the right service option.C