MJD32CJ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS PNP 100V 3A DPAK
TRANS PNP 100V 3A DPAK
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.6 W surface-mounted DPAK
Bipolar (BJT) Transistor PNP 100 V 3 A 3MHz 1.6 W surface-mounted DPAK
Description
Description
The MJD32CJ is a PNP high power bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 3 A, and a power dissipation capability of 1.6 W. This device operates at a frequency of up to 3 MHz, making it suitable for various power management applications.
The MJD32CJ is a PNP high power bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 3 A, and a power dissipation capability of 1.6 W. This device operates at a frequency of up to 3 MHz, making it suitable for various power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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