MJD31CJ
Manufacturer
NEXPERIA
Data sheet
Data sheet
Specification
Specification
TRANS NPN 100V 3A DPAK
TRANS NPN 100V 3A DPAK
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W surface-mounted DPAK
Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W surface-mounted DPAK
Description
Description
The MJD31CJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 3 A, and a total power dissipation of 1.6 W. This device operates efficiently at switching speeds up to 3 MHz, making it suitable for various power management applications.
The MJD31CJ is a high power NPN bipolar transistor designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V, a collector current rating of 3 A, and a total power dissipation of 1.6 W. This device operates efficiently at switching speeds up to 3 MHz, making it suitable for various power management applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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