MJD31CH-QJ
Manufacturer
NEXPERIA
Specification
Specification
BJT - MJD SERIES
BJT - MJD SERIES
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W Surface Mount DPAK
Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 1.6 W Surface Mount DPAK
Description
Description
The MJD31CH-QJ from Nexperia USA Inc. is a high-performance NPN bipolar junction transistor (BJT) designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, making it suitable for various power switching applications. With a transition frequency of 3 MHz and a power dissipation capability of 1.6 W, this transistor is ideal for use in amplifiers and signal processing circuits. Its DPAK package ensures efficient thermal management and ease of integration into compact designs.
The MJD31CH-QJ from Nexperia USA Inc. is a high-performance NPN bipolar junction transistor (BJT) designed for surface mount applications. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 3 A, making it suitable for various power switching applications. With a transition frequency of 3 MHz and a power dissipation capability of 1.6 W, this transistor is ideal for use in amplifiers and signal processing circuits. Its DPAK package ensures efficient thermal management and ease of integration into compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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