MB85R256FPFCN-G-BNDE1
Manufacturer
FUJITSU
Data sheet
Data sheet
Specification
Specification
IC FRAM 256KBIT PAR 28TSOP I
IC FRAM 256KBIT PAR 28TSOP I
Detailed specification
Detailed specification
FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-TSOP I
FRAM (Ferroelectric RAM) Memory IC 256Kbit Parallel 150 ns 28-TSOP I
Description
Description
The MB85R256FPFCN-G-BNDE1 is a 256Kbit Ferroelectric RAM (FRAM) memory integrated circuit (IC) from Fujitsu Semiconductor Memory Solution. This memory IC operates in parallel mode with a fast access time of 150 ns, making it suitable for high-speed applications. It is housed in a 28-pin TSOP I package, ensuring a compact design for space-constrained environments. FRAM technology provides non-volatile memory with high endurance and low power consumption, ideal for applications requiring frequent write cycles and data retention without power.
The MB85R256FPFCN-G-BNDE1 is a 256Kbit Ferroelectric RAM (FRAM) memory integrated circuit (IC) from Fujitsu Semiconductor Memory Solution. This memory IC operates in parallel mode with a fast access time of 150 ns, making it suitable for high-speed applications. It is housed in a 28-pin TSOP I package, ensuring a compact design for space-constrained environments. FRAM technology provides non-volatile memory with high endurance and low power consumption, ideal for applications requiring frequent write cycles and data retention without power.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Gabriella or one of our other skilled sales representatives. They'll help you find the right service option.C