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MB85R1001ANC-GE1

Manufacturer

FUJITSU

data-sheet
Data sheet
Data sheet
MB85R1001ANC-GE1 is designed for industrial and consumer electronics applications where nonvolatile memory is essential. Its high endurance and data retention capabilities make it ideal for use in smart meters, automotive systems, and various embedded applications requiring reliable data storage.
Specification
Specification
IC FRAM 1MBIT PARALLEL 48TSOP
IC FRAM 1MBIT PARALLEL 48TSOP
Detailed specification
Detailed specification
FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 150 ns 48-TSOP
FRAM (Ferroelectric RAM) Memory IC 1Mbit Parallel 150 ns 48-TSOP
Description
Description
The MB85R1001ANC-GE1 is a 1Mbit FRAM (Ferroelectric RAM) memory IC featuring a parallel interface and a read/write endurance of 10^10 cycles. It operates at a supply voltage of 3.0 V to 3.6 V and supports a read/write cycle time of 150 ns. The device is housed in a 48-pin TSOP package and is suitable for applications requiring nonvolatile memory without a backup battery.
The MB85R1001ANC-GE1 is a 1Mbit FRAM (Ferroelectric RAM) memory IC featuring a parallel interface and a read/write endurance of 10^10 cycles. It operates at a supply voltage of 3.0 V to 3.6 V and supports a read/write cycle time of 150 ns. The device is housed in a 48-pin TSOP package and is suitable for applications requiring nonvolatile memory without a backup battery.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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