KSP2907ABU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS PNP 60V 0.6A TO92-3
TRANS PNP 60V 0.6A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92-3
Bipolar (BJT) Transistor PNP 60 V 600 mA 200MHz 625 mW Through Hole TO-92-3
Description
Description
The KSP2907ABU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification. It features a collector-emitter voltage (VCEO) of -60 V, a collector current (IC) rating of -600 mA, and a power dissipation of 625 mW. With a current gain bandwidth product of 200 MHz, it is suitable for high-frequency applications. The device is housed in a TO-92-3 package, making it ideal for through-hole mounting in various electronic circuits.
The KSP2907ABU is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification. It features a collector-emitter voltage (VCEO) of -60 V, a collector current (IC) rating of -600 mA, and a power dissipation of 625 mW. With a current gain bandwidth product of 200 MHz, it is suitable for high-frequency applications. The device is housed in a TO-92-3 package, making it ideal for through-hole mounting in various electronic circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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