KSP13BU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN DARL 30V 0.5A TO92-3
TRANS NPN DARL 30V 0.5A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN - Darlington 30 V (1.18 in) 500 mA (0.02 in) 125MHz 625 mW (0.02 in) Through Hole TO-92-3
Bipolar (BJT) Transistor NPN - Darlington 30 V (1.18 in) 500 mA (0.02 in) 125MHz 625 mW (0.02 in) Through Hole TO-92-3
Description
Description
The KSP13BU is a NPN Darlington transistor designed for high current gain applications. It features a collector-emitter voltage of 30 V, a maximum collector current of 500 mA, and a power dissipation of 625 mW. This device operates at a frequency of up to 125 MHz, making it suitable for various electronic applications.
The KSP13BU is a NPN Darlington transistor designed for high current gain applications. It features a collector-emitter voltage of 30 V, a maximum collector current of 500 mA, and a power dissipation of 625 mW. This device operates at a frequency of up to 125 MHz, making it suitable for various electronic applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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