KSE44H11
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 80V 10A TO220-3
TRANS NPN 80V 10A TO220-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 80 V 10 A 50MHz 1.67 W Through Hole TO-220-3
Bipolar (BJT) Transistor NPN 80 V 10 A 50MHz 1.67 W Through Hole TO-220-3
Description
Description
The KSE44H11 from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring robust switching and amplification capabilities. With a maximum collector-emitter voltage of 80V and a continuous collector current rating of 10A, this transistor operates effectively at frequencies up to 50MHz. It has a power dissipation capability of 1.67W and is housed in a TO-220-3 package, making it suitable for through-hole mounting in power electronics and signal processing circuits.
The KSE44H11 from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring robust switching and amplification capabilities. With a maximum collector-emitter voltage of 80V and a continuous collector current rating of 10A, this transistor operates effectively at frequencies up to 50MHz. It has a power dissipation capability of 1.67W and is housed in a TO-220-3 package, making it suitable for through-hole mounting in power electronics and signal processing circuits.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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