KSE13003H2ASTU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 400V 1.5A TO126-3
TRANS NPN 400V 1.5A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 400 V 1.5 A 4 MHz 20 W Through Hole TO-126-3
Bipolar (BJT) Transistor NPN 400 V 1.5 A 4 MHz 20 W Through Hole TO-126-3
Description
Description
The KSE13003H2ASTU is a high-voltage NPN bipolar junction transistor (BJT) designed for switching applications. It features a collector-emitter voltage rating of 400 V, a collector current of 1.5 A, and a power dissipation of 20 W. With a current gain bandwidth product of 4 MHz, it is suitable for high-speed switching in various applications.
The KSE13003H2ASTU is a high-voltage NPN bipolar junction transistor (BJT) designed for switching applications. It features a collector-emitter voltage rating of 400 V, a collector current of 1.5 A, and a power dissipation of 20 W. With a current gain bandwidth product of 4 MHz, it is suitable for high-speed switching in various applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Contact sales
Contact Lukas or one of our other skilled sales representatives. They'll help you find the right service option.C