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KSD880YTU

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
KSD880YTU is utilized in industrial and consumer electronics applications, particularly in low-frequency power amplifiers and switching circuits. Its robust specifications make it ideal for use in power management and signal amplification tasks, ensuring reliable performance in various electronic systems.
Specification
Specification
TRANS NPN 60V 3A TO220-3
TRANS NPN 60V 3A TO220-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 3 A 3 MHz 30 W Through Hole TO-220-3
Bipolar (BJT) Transistor NPN 60 V 3 A 3 MHz 30 W Through Hole TO-220-3
Description
Description
The KSD880YTU is a Bipolar NPN Transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 60V, a collector current rating of 3A, and a power dissipation capability of 30W. With a current gain bandwidth product of 3MHz, it is suitable for various amplification tasks in electronic circuits. The TO-220-3 package allows for efficient thermal management.
The KSD880YTU is a Bipolar NPN Transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 60V, a collector current rating of 3A, and a power dissipation capability of 30W. With a current gain bandwidth product of 3MHz, it is suitable for various amplification tasks in electronic circuits. The TO-220-3 package allows for efficient thermal management.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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