KSD880O
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 3A TO220-3
TRANS NPN 60V 3A TO220-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 30 W Through Hole TO-220-3
Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 30 W Through Hole TO-220-3
Description
Description
The KSD880O is a Bipolar NPN Transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a power dissipation capability of 30 W. With a current gain bandwidth product of 3 MHz, it is suitable for various amplification tasks in electronic circuits. The TO-220-3 package ensures efficient thermal management and ease of mounting in through-hole applications.
The KSD880O is a Bipolar NPN Transistor designed for high-performance applications. It features a maximum collector-emitter voltage of 60 V, a collector current rating of 3 A, and a power dissipation capability of 30 W. With a current gain bandwidth product of 3 MHz, it is suitable for various amplification tasks in electronic circuits. The TO-220-3 package ensures efficient thermal management and ease of mounting in through-hole applications.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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