KSD2012GTU
Manufacturer
FAIRCHILD SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 3A TO220F-3
TRANS NPN 60V 3A TO220F-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
Bipolar (BJT) Transistor NPN 60 V 3 A 3MHz 25 W Through Hole TO-220F-3
Description
Description
The KSD2012GTU is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 60V and a continuous collector current rating of 3A, this transistor operates effectively at frequencies up to 3MHz. It is housed in a TO-220F-3 package, allowing for easy mounting and heat dissipation, making it suitable for power management and signal processing applications in consumer electronics and industrial systems.
The KSD2012GTU is a high-performance NPN bipolar junction transistor (BJT) designed for various applications requiring efficient switching and amplification. With a maximum collector-emitter voltage of 60V and a continuous collector current rating of 3A, this transistor operates effectively at frequencies up to 3MHz. It is housed in a TO-220F-3 package, allowing for easy mounting and heat dissipation, making it suitable for power management and signal processing applications in consumer electronics and industrial systems.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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