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KSD1691YS

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
KSD1691YS is used in industrial and consumer electronics applications, particularly in power management and signal amplification circuits. Its robust specifications make it ideal for applications requiring high current handling and low saturation voltage.
Specification
Specification
TRANS NPN 60V 5A TO126-3
TRANS NPN 60V 5A TO126-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3
Bipolar (BJT) Transistor NPN 60 V 5 A 1.3 W Through Hole TO-126-3
Description
Description
The KSD1691YS is a Bipolar NPN Transistor designed for high power applications, featuring a collector-emitter voltage of 60 V and a maximum collector current of 5 A. It has a power dissipation of 1.3 W and operates within a junction temperature range of -55°C to 150°C. This TO-126-3 package transistor is suitable for various electronic circuits requiring reliable switching and amplification.
The KSD1691YS is a Bipolar NPN Transistor designed for high power applications, featuring a collector-emitter voltage of 60 V and a maximum collector current of 5 A. It has a power dissipation of 1.3 W and operates within a junction temperature range of -55°C to 150°C. This TO-126-3 package transistor is suitable for various electronic circuits requiring reliable switching and amplification.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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