KSD1616AGTA
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 1A TO92-3
TRANS NPN 60V 1A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 1 A 160 MHz 750 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 60 V 1 A 160 MHz 750 mW Through Hole TO-92-3
Description
Description
The KSD1616AGTA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates at a maximum collector-emitter voltage of 60V and can handle a collector current of up to 1A, making it suitable for power amplification and switching applications. With a transition frequency of 160MHz and a power dissipation capability of 750mW, this TO-92-3 package transistor is ideal for use in low to medium power circuits, ensuring reliable performance in compact designs.
The KSD1616AGTA from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for various electronic applications. It operates at a maximum collector-emitter voltage of 60V and can handle a collector current of up to 1A, making it suitable for power amplification and switching applications. With a transition frequency of 160MHz and a power dissipation capability of 750mW, this TO-92-3 package transistor is ideal for use in low to medium power circuits, ensuring reliable performance in compact designs.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
Other manufacturers
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