KSD1616AGBU
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 60V 1A TO92-3
TRANS NPN 60V 1A TO92-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 60 V 1 A 160MHz 750 mW Through Hole TO-92-3
Description
Description
The KSD1616AGBU is a NPN bipolar junction transistor designed for audio frequency power amplification and medium-speed switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 1 A, and a current gain bandwidth product of 160 MHz. The device is housed in a TO-92-3 package and is Pb-free.
The KSD1616AGBU is a NPN bipolar junction transistor designed for audio frequency power amplification and medium-speed switching applications. It features a collector-emitter voltage rating of 60 V, a collector current of 1 A, and a current gain bandwidth product of 160 MHz. The device is housed in a TO-92-3 package and is Pb-free.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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