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KSC5502TU

Manufacturer

ON SEMICONDUCTOR

data-sheet
Data sheet
Data sheet
KSC5502TU is utilized in high-voltage power switching applications, particularly in industrial and electronic ballast systems. Its robust specifications, including a collector-emitter voltage of 600 V and a collector current of 2 A, make it ideal for applications requiring reliable performance under high-stress conditions.
Specification
Specification
TRANS NPN 600V 2A TO220-3
TRANS NPN 600V 2A TO220-3
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 600 V 2 A 50 W Through Hole TO-220-3
Bipolar (BJT) Transistor NPN 600 V 2 A 50 W Through Hole TO-220-3
Description
Description
The KSC5502TU is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 600 V, a collector current of 2 A, and a power dissipation capability of 50 W. The TO-220-3 package allows for efficient thermal management, making it suitable for various electronic ballast applications. With a wide safe operating area and small variance in storage time, it ensures reliable performance in demanding environments.
The KSC5502TU is a high-voltage NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 600 V, a collector current of 2 A, and a power dissipation capability of 50 W. The TO-220-3 package allows for efficient thermal management, making it suitable for various electronic ballast applications. With a wide safe operating area and small variance in storage time, it ensures reliable performance in demanding environments.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
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