KSC5502DTM
Manufacturer
ON SEMICONDUCTOR
Data sheet
Data sheet
Specification
Specification
TRANS NPN 600V 2A TO252AA
TRANS NPN 600V 2A TO252AA
Detailed specification
Detailed specification
Bipolar (BJT) Transistor NPN 600 V 2 A 11 MHz 50 W surface-mounted TO-252AA
Bipolar (BJT) Transistor NPN 600 V 2 A 11 MHz 50 W surface-mounted TO-252AA
Description
Description
The KSC5502DTM is a high-performance NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 600 V, a collector current of 2 A, and a current gain bandwidth product of 11 MHz. The device is housed in a TO-252AA surface mount package, making it suitable for compact designs. With a built-in free-wheeling diode and a wide safe operating area, it is ideal for electronic ballast applications and other high-voltage switching tasks.
The KSC5502DTM is a high-performance NPN bipolar junction transistor designed for power switching applications. It features a collector-emitter voltage rating of 600 V, a collector current of 2 A, and a current gain bandwidth product of 11 MHz. The device is housed in a TO-252AA surface mount package, making it suitable for compact designs. With a built-in free-wheeling diode and a wide safe operating area, it is ideal for electronic ballast applications and other high-voltage switching tasks.
Availability
Availability
Can be ordered from Westcomp
Can be ordered from Westcomp
Check stock
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